leshan radio company, ltd. dual general purpose transistors npn/pnp duals (complimentary) these transistors are designed for general purpose amplifier applications. they are housed in the sot?363/sc?88 which is designed for low power surface mount applications. 1 3 2 sot - 363/sc-88 case 419b style 1 6 4 5 maximum ratings - npn rating symbol lbc846 lbc847 lbc848 unit collector - emitter voltage v ceo 65 45 30 v collector - base voltage v cbo 80 50 30 v emitter - base voltage v ebo 6.0 6.0 5.0 v collector current e continuous i c 100 100 100 madc maximum ratings - pnp rating symbol lbc846 lbc847 lbc848 unit collector - emitter voltage v ceo - 65 - 45 - 30 v collector - base voltage v cbo - 80 - 50 - 30 v emitter - base voltage v ebo - 5.0 - 5.0 - 5.0 v collector current e continuous i c - 100 - 100 - 100 madc thermal characteristics characteristic symbol max unit total device dissipation per device fr - 5 board (1) t a = 25?c derate above 25?c p d 380 250 3.0 mw mw/?c thermal resistance, junction to ambient r ja 328 ?c/w junction and storage temperature range t j , t stg - 55 to +150 ?c 1 .fr - 5 = 1.0 x 0.75 x 0.062 in ordering information device marking see table lbc846bpdw1t1g LBC847BPDW1T1G lbc847cpdw1t1g lbc848bpdw1t1g lbc848cpdw1t1g 4 6 5 3 1 2 q 2 q 1 rohs requirements. we declare that the material of product compliance with device marking shipping lbc846bpdw1t1g 3 0 0 0 u n i t s / r e e l lbc846bpdw1t3g LBC847BPDW1T1G 3 0 0 0 u n i t s / r e e l lbc847bpdw1t3g lbc847cpdw1t1g 3 0 0 0 u n i t s / r e e l lbc847cpdw1t3g lbc848bpdw1t1g lbc848bpdw1t3g lbc848cpdw1t1g lbc848cpdw1t3g 3 0 0 0 u n i t s / r e e l 3 0 0 0 u n i t s / r e e l bb bb bf bf bg bg bk bk bl bl 10 0 0 0 u n i t s / r e e l 10 0 0 0 u n i t s / r e e l 10 0 0 0 u n i t s / r e e l 10 0 0 0 u n i t s / r e e l 10 0 0 0 u n i t s / r e e l rev.o 1/9
leshan radio company, ltd. l bc846bpdw1t1g l bc847bpdw1t1g series, l bc848bpdw1t1g series electrical characteristics (npn) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (i c = 10 ma ) lb c846 series lb c847 series lb c848 series v (br)ceo 65 45 30 e e e e e e v collectoremitter breakdown voltage (i c = 10 m a, v eb = 0 ) lb c846 series lb c847b only lb c848 series v (br)ces 80 50 30 e e e e e e v collectorbase breakdown voltage (i c = 10 a ) lb c846 series lb c847 series lb c848 series v (br)cbo 80 50 30 e e e e e e v emitterbase breakdown voltage (i e = 1.0 a ) lb c846 series lb c847 series lb c848 series v (br)ebo 6.0 6.0 5.0 e e e e e e v collector cutoff current (v cb = 30 v) (v cb = 30 v, t a = 150 c) i cbo e e e e 15 5.0 na m a on characteristics dc current gain (i c = 2.0 ma, v c e = 5.0 v ) lb c846b, l bc847b, l bc848b lb c847c, l bc848c h fe 200 420 290 520 475 800 e collectoremitter saturation voltage (i c = 10 ma, i b = 0.5 ma) collectoremitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v ce(sat) e e e e 0.25 0.6 v baseemitter saturation voltage (i c = 10 ma, i b = 0.5 ma) baseemitter saturation voltage (i c = 100 ma, i b = 5.0 ma) v be(sat) e e 0.7 0.9 e e v baseemitter voltage (i c = 2.0 ma, v ce = 5.0 v) baseemitter voltage (i c = 10 ma, v ce = 5.0 v) v be(on) 580 e 660 e 700 770 mv smallsignal characteristics currentgain e bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 e e mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c obo e e 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k w , f = 1.0 khz, bw = 200 hz) nf e e 10 db rev.o 2/9
leshan radio company, ltd. electrical characteristics (pnp) (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (i c = 10 ma ) lb c846 series lb c847 series lb c848 series v (br)ceo 65 45 30 e e e e e e v collectoremitter breakdown voltage (i c = 10 m a, v eb = 0 ) lb c846 series lb c847 series lb c848 series v (br)ces 80 50 30 e e e e e e v collectorbase breakdown voltage (i c = 10 a ) lb c846 series lb c847 series lb c848 series v (br)cbo 80 50 30 e e e e e e v emitterbase breakdown voltage (i e = 1.0 a ) lb c846 series lb c847 series lb c848 series v (br)ebo 5.0 5.0 5.0 e e e e e e v collector cutoff current (v cb = 30 v) collector cutoff current (v cb = 30 v, t a = 150 c) i cbo e e e e 15 4.0 na m a on characteristics dc current gain (i c = 10 m a, v c e = 5.0 v ) lb c846b, l bc847b, l bc848b lb c847c, l bc848c (i c = 2.0 ma, v c e = 5.0 v ) lb c846b, l bc847b, l bc848b lb c847c, l bc848c h fe e e 200 420 150 270 290 520 e e 475 800 e collectoremitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v ce(sat) e e e e 0.3 0.65 v baseemitter saturation voltage (i c = 10 ma, i b = 0.5 ma) (i c = 100 ma, i b = 5.0 ma) v be(sat) e e 0.7 0.9 e e v baseemitter on voltage (i c = 2.0 ma, v ce = 5.0 v) (i c = 10 ma, v ce = 5.0 v) v be(on) 0.6 e e e 0.75 0.82 v smallsignal characteristics currentgain e bandwidth product (i c = 10 ma, v ce = 5.0 vdc, f = 100 mhz) f t 100 e e mhz output capacitance (v cb = 10 v, f = 1.0 mhz) c ob e e 4.5 pf noise figure (i c = 0.2 ma, v ce = 5.0 vdc, r s = 2.0 k w , f = 1.0 khz, bw = 200 hz) nf e e 10 db l bc846bpdw1t1g l bc847bpdw1t1g series, l bc848bpdw1t1g series rev.o 3/9
leshan radio company, ltd. typica l npn characteristics l bc846 figure 1. dc current gain i c , collector current (ma) figure 2. aono voltage i c , collector current (ma) 0.8 1.0 0.6 0.2 0.4 1.0 2.0 0.1 1.0 10 100 0.2 0.2 0.5 0.2 1.0 10 200 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v h fe , dc current gain (normalized) v, voltage (volts) v ce = 5 v t a = 25 c 0 0.5 2.0 5.0 20 50 100 figure 3. collector saturation region i b , base current (ma) figure 4. baseemitter temperature coefficient i c , collector current (ma) -1.0 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) q 0.2 2.0 10 200 1.0 t a = 25 c 200 ma 50 ma i c = 10 ma 0.05 0.2 0.5 2.0 5.0 100 ma 20 ma -1.4 -1.8 -2.2 -2.6 -3.0 0.5 5.0 20 50 100 -55 c to 125 c q vb for v be figure 5. capacitance v r , reverse voltage (volts) 40 figure 6. currentgain bandwidth product i c , collector current (ma) 0.1 0.2 1.0 50 2.0 2.0 10 100 100 200 500 50 20 20 10 6.0 4.0 1.0 10 50 100 5.0 v ce = 5 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product t 0.5 5.0 20 t a = 25 c c ob c ib l bc846bpdw1t1g l bc847bpdw1t1g series, l bc848bpdw1t1g series rev.o 4/9
leshan radio company, ltd. typica l pnp characteristics e lb c846 figure 7. dc current gain i c , collector current (amp) figure 8. aono voltage i c , collector current (ma) -0.8 -1.0 -0.6 -0.2 -0.4 1.0 2.0 -0.1 -1.0 -10 -200 -0.2 0.2 0.5 -0.2 -1.0 -10 -200 t j = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be @ v ce = -5.0 v figure 9. collector saturation region i b , base current (ma) figure 10. baseemitter temperature coefficient i c , collector current (ma) -1.0 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 v ce , collector-emitter voltage (volts) vb , temperature coefficient (mv/ c) q -0.2 -2.0 -10 -200 -1.0 t j = 25 c i c = -10 ma h fe , dc current gain (normalized) v, voltage (volts) v ce = -5.0 v t a = 25 c 0 -0.5 -2.0 -5.0 -20 -50 -100 -0.05 -0.2 -0.5 -2.0 -5.0 -100 ma -20 ma -1.4 -1.8 -2.2 -2.6 -3.0 -0.5 -5.0 -20 -50 -100 -55 c to 125 c q vb for v be -2.0 -5.0 -20 -50 -100 figure 11. capacitance v r , reverse voltage (volts) 40 figure 12. currentgain bandwidth product i c , collector current (ma) -0.1 -0.2 -1.0 -50 2.0 -2.0 -10 -100 100 200 500 50 20 20 10 6.0 4.0 -1.0 -10 -100 v ce = -5.0 v c, capacitance (pf) f, current-gain - bandwidth product t -0.5 -5.0 -20 t j = 25 c c ob c ib 8.0 -50 ma -200 ma l bc846bpdw1t1g l bc847bpdw1t1g series, l bc848bpdw1t1g series rev.o 5/9
leshan radio company, ltd. typica l npn characteristics lb c847 series & l bc848 series figure 13. normalized dc current gain i c , collector current (madc) 2.0 figure 14. asaturationo and aono voltages i c , collector current (madc) 0.2 0.5 1.0 10 20 50 0.2 100 figure 15. collector saturation region i b , base current (ma) figure 16. baseemitter temperature coefficient i c , collector current (ma) 2.0 5.0 200 0.6 0.7 0.8 0.9 1.0 0.5 0 0.2 0.4 0.1 0.3 1.6 1.2 2.0 2.8 2.4 1.2 1.6 2.0 0.02 1.0 10 0 20 0.1 0.4 0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.8 0.6 0.4 0.3 0.2 0.5 1.0 10 20 50 2.0 10070 30 7.05.03.0 0.70.3 0.1 0.2 1.0 10 100 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = 10 v v ce = 10 v t a = 25 c -55 c to +125 c t a = 25 c i c = 50 ma i c = 100 ma i c = 200 ma i c = 20 ma i c = 10 ma 1.0 figure 17. capacitances v r , reverse voltage (volts) 10 figure 18. currentgain bandwidth product i c , collector current (madc) 0.4 0.6 1.0 10 20 1.0 2.0 6.0 40 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 0.7 1.0 10 20 2.0 50 30 7.05.03.0 0.5 v ce = 10 v t a = 25 c c, capacitance (pf) f, current-gain - bandwidth product (mhz) t 0.8 4.0 8.0 t a = 25 c c ob c ib l bc846bpdw1t1g l bc847bpdw1t1g series, l bc848bpdw1t1g series rev.o 6/9
leshan radio company, ltd. typica l pnp characteristics e lb c847 series & l bc848 series figure 19. normalized dc current gain i c , collector current (madc) 2.0 figure 20. asaturationo and aono voltages i c , collec t or current (madc) -0.2 0.2 figure 21. collector saturation region i b , base current (ma) figure 22. baseemitter temperature coefficient i c , collector current (ma) -0.6 -0.7 -0.8 -0.9 -1.0 -0.5 0 -0.2 -0.4 -0.1 -0.3 1.6 1.2 2.0 2.8 2.4 -1.2 -1.6 -2.0 -0.02 -1.0 -10 0 -20 -0.1 -0.4 -0.8 h fe , normalized dc current gain v, voltage (volts) v ce , collector-emitter voltage (v) vb , temperature coefficient (mv/ c) q 1.5 1.0 0.7 0.5 0.3 -0.2 -10 -100 -1.0 t a = 25 c v be(sat) @ i c /i b = 10 v ce(sat) @ i c /i b = 10 v be(on) @ v ce = -10 v v ce = -10 v t a = 25 c -55 c to +125 c i c = -100 ma i c = -20 ma -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 i c = -200 ma i c = -50 ma i c = -10 ma figure 23. capacitances v r , reverse voltage (volts) 10 figure 24. currentgain bandwidth product i c , collector current (madc) -0.4 1.0 80 100 200 300 400 60 20 40 30 7.0 5.0 3.0 2.0 -0.5 c, capacitance (pf) f, current-gain - bandwidth product (mhz) t t a = 25 c c ob c ib -0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40 150 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50 v ce = -10 v t a = 25 c t a = 25 c 1.0 l bc846bpdw1t1g l bc847bpdw1t1g series, l bc848bpdw1t1g series rev.o 7/9
leshan radio company, ltd. figure 25. thermal response t, time (ms) 1.0 r(t), transient thermal 1.0 0 resistance (normalized) 0.1 0.01 0.001 10 100 1.0k 10k 100k d = 0.5 0.2 0.1 0.05 single pulse z ja (t) = r(t) r ja r ja = 328 c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) t c = p (pk) r jc (t) t 1 t 2 p (pk) duty cycle, d = t 1 /t 2 1.0m 0.02 0.01 l bc846bpdw1t1g l bc847bpdw1t1g series, l bc848bpdw1t1g series rev.o 8/9
leshan radio company, ltd. notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. inches millimeters dim min max min max a 0.071 0.087 1.80 2.20 b 0.045 0.053 1.15 1.35 c 0.031 0.043 0.80 1.10 d 0.004 0.012 0.10 0.30 g 0.026 bsc 0.65 bsc h --- 0.004 --- 0.10 j 0.004 0.010 0.10 0.25 k 0.004 0.012 0.10 0.30 n 0.008 ref 0.20 ref s 0.079 0.087 2.00 2.20 pin 1. emitter 2 2. base 2 3. collector 1 4.emitter 1 5. base 1 6.collector 2 b 0.2 (0.008) a g s h c n j k d 6 p l 6 5 4 1 2 3 - b - m m 0.5 mm (min) 0.4 mm (min) 0.65 mm 0.65 mm 1.9 mm s c - 88/s o t - 363 l bc846bpdw1t1 , l bc847bpdw1t1 series, l bc848bpdw1t1 series rev.o 9/9
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